Mitsubishi RD1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	RD15HVF1	Mitsubishi Electric Semiconductor	Silicon MOSFET Power Transistor High power and High Gain: Pout>15 W, Gp>14 dB @Vds=12.5 V,f=175 MHz High Efficiency: 60 % (typ) on VHF Band Integrated gate protection diode APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. 12.3MIN 1.2+/-0.4
2	RD16HHF1	Mitsubishi Electric	Silicon MOSFET Power Transistor High power gain: Pout>16W, Gp>16dB @Vds=12.5V,f=30MHz Integrated gate protection diode 12.3+/-0.6 3.2+/-0.4 4.8MAX 9+/-0.4 OUTLINE DRAWING 9.1+/-0.7 3.6+/-0.2 2 1.2+/-0.4 0.8+0.10/-0.15 1.3+/-0.4 12.3MIN APPLICATION For output stage of high pow
3	RD12MVS1	Mitsubishi Electric	Silicon RF Power MOS FET High Power Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz High Efficiency: 57%typ. (175MHz) APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD12MVS1 is EU RoHS compliant product. RoHS compliant produ
4	RD12MVP1	Mitsubishi Electric	Silicon MOSFET Power Transistor •High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz •High Efficiency: 55%min. (175MHz) •No gate protection diode INDEX MARK [Gate] (3.6) (4.5) 0.95+/-0.2 2.6+/-0.2 TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [outpu
5	RD100HHF1	Mitsubishi Electric Semiconductor	MOS FET 9.6+/-0.3 0.1 -0.01 3 +0.05 R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7 APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. 5.0+/-0.3 18.5+/-0.3 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS
6	RD100HHF1C	Mitsubishi	Silicon RF Power MOS FET High power and High Gain: Pout>100W, Gp>11.5dB @VDD=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band 17.0± 0.5 4-C2 1 2 9.6± 0.3 10.0± 0.3 3 5.0±0.3 18.5±0.3 2-R1.6 ± 0.15 3.3± 0.2 APPLICATION For output stage of high power amplifiers in HF Ba