Busque con el número de pieza junto con el fabricante o la descripción
RD100HHF1C |
Click to view a larger image
| Part Number | RD100HHF1C |
| Manufacturer | Mitsubishi |
| Description | RD100HHF1C is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 7.0±0.5 25.0±0.3 11.0±0.30 FEATURES High power and High Gain: Pout>100W, Gp... |
| Features |
High power and High Gain: Pout>100W, Gp>11.5dB @VDD=12.5V,f=30MHz
High Efficiency: 60%typ.on HF Band
17.0± 0.5
4-C2
1
2
9.6± 0.3 10.0± 0.3
3
5.0±0.3 18.5±0.3
2-R1.6 ± 0.15
3.3± 0.2
APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.
6.2±0.7 4.5±0.7
0.1+-00..0051
PIN 1. DRAIN 2. SOURCE 3. GATE UNIT:mm
RoHS COMPLIANT
RD100HHF1C-501 is a RoHS compliant products. .
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS VGSS Pch Pin ID
Drain to source voltage Gate to source voltage Channel dissipation Input power Dra... |
| Document |
 RD100HHF1C Data Sheet
PDF 466.83KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | RD100HHF1 |
Mitsubishi Electric Semiconductor |
MOS FET |
|
| 2 | RD1004LS-SB5 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Diode |
|
| 3 | RD1006LN |
Sanyo Semicon Device |
High-Speed Switching Diode |
|
| 4 | RD1006LS |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Diode |
|
| 5 | RD1006LS-SB5 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Diode |
|
| 6 | RD100E |
NEC |
500 mW DHD ZENER DIODE DO-35 |
|
Desde 2024. D4U Semiconductor.
|