Busque con el número de pieza junto con el fabricante o la descripción
RD16HHF1 |
Click to view a larger image
| Part Number | RD16HHF1 |
| Manufacturer | Mitsubishi Electric |
| Description | RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. FEATURES High power gain: Pout>16W, Gp>16dB @Vds=12.5V,f=30MHz Integrated gate protection diode 12... |
| Features |
High power gain: Pout>16W, Gp>16dB @Vds=12.5V,f=30MHz Integrated gate protection diode
12.3+/-0.6 3.2+/-0.4
4.8MAX 9+/-0.4
OUTLINE DRAWING
9.1+/-0.7
3.6+/-0.2
2
1.2+/-0.4 0.8+0.10/-0.15
1.3+/-0.4
12.3MIN
APPLICATION
For output stage of high power amplifiers in HF band mobile radio sets.
123
2.5 2.5
5deg
0.5+0.10/-0.15
3.1+/-0.6 4.5 +/- 0.5
RoHS COMPLIANT
RD16HHF1-501 is a RoHS compliant product.
PINS
1: GAT E
9.5MAX
2:SOURCE
note: 3:DRAIN
Torelance of no designation means typical value.
Dimension in mm.
RoHS compliance is indicate by the letter “G” after the lot
marking.
Th... |
| Document |
 RD16HHF1 Data Sheet
PDF 425.47KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|