Micro Electronics 2N7 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2N7000	ST Microelectronics	N-Channel MOSFET Type VDSS RDS(on) max ID 2N7000 )2N7002 60 V 60 V < 5 Ω(@10V) 0.35 A < 5 Ω(@10V) 0.20 A t(s ■ Low Qg uc ■ Low threshold drive rodApplication te P ■ Switching applications oleDescription bsThis Power MOSFET is the second generation of OSTMicro
2	SVD2N70F	Silan Microelectronics	700V N-CHANNEL MOSFET ∗ ∗ ∗ ∗ ∗ 2A,700V, RDS(on) (typ)=5.5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD2N70M SVD2N70F SVD2N70T Package TO-251-3L TO-220F-3L TO-220-3L Marking SVD2N70M SVD2N70F S
3	CS12N70A8H	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤0.75Ω) l Low Gate Charge (Typical Data:47nC) l Low Reverse transfer capacitances(Typical:15pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（
4	SVD2N70T	Silan Microelectronics	700V N-CHANNEL MOSFET ∗ ∗ ∗ ∗ ∗ 2A,700V, RDS(on) (typ)=5.5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD2N70M SVD2N70F SVD2N70T Package TO-251-3L TO-220F-3L TO-220-3L Marking SVD2N70M SVD2N70F S
5	SVD2N70M	Silan Microelectronics	700V N-CHANNEL MOSFET ∗ ∗ ∗ ∗ ∗ 2A,700V, RDS(on) (typ)=5.5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD2N70M SVD2N70F SVD2N70T Package TO-251-3L TO-220F-3L TO-220-3L Marking SVD2N70M SVD2N70F S
6	JCS2N70FH	JILIN SINO-MICROELECTRONICS	N-CHANNEL MOSFET Low gate charge Low Crss (typical 5pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product TO-126F ORDER MESSAGE Order codes Marking Package JCS2N70MFH-O-MF-N-B JCS2N70VH-O-V-N-B JCS2N70RH-O-R-N-B JCS2N70RH-O-
7	SDD02N70	SamHop Microelectronics	N-Channel MOSFET Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. D G S SDU SERIES TO-252(D-PAK) G DS SDD SERIES TO-251S(I-PAK) G DS SDD SERIES TO-251L(I-PAK) ORDERING INFORMATION Ordering Code Package SDU02N70HZ TO-252
8	CS2N70FA9	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤6.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:3.8pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolu
9	2N7002	ST Microelectronics	N-Channel MOSFET Type VDSS RDS(on) max ID 2N7000 )2N7002 60 V 60 V < 5 Ω(@10V) 0.35 A < 5 Ω(@10V) 0.20 A t(s ■ Low Qg uc ■ Low threshold drive rodApplication te P ■ Switching applications oleDescription bsThis Power MOSFET is the second generation of OSTMicro
10	JCS2N70FHC	JILIN SINO-MICROELECTRONICS	N-CHANNEL MOSFET zLow gate charge zLow Crss (typical 7pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes JCS2N70FHC Marking JCS2N70FH Package TO-220MF Halogen Free NO Packaging Tube Device
11	JCS2N70H	JILIN SINO-MICROELECTRONICS	N-CHANNEL MOSFET Low gate charge Low Crss (typical 5pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product TO-126F ORDER MESSAGE Order codes Marking Package JCS2N70MFH-O-MF-N-B JCS2N70VH-O-V-N-B JCS2N70RH-O-R-N-B JCS2N70RH-O-
12	JCS2N70VH	JILIN SINO-MICROELECTRONICS	N-CHANNEL MOSFET Low gate charge Low Crss (typical 5pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product TO-126F ORDER MESSAGE Order codes Marking Package JCS2N70MFH-O-MF-N-B JCS2N70VH-O-V-N-B JCS2N70RH-O-R-N-B JCS2N70RH-O-
13	JCS2N70CH	JILIN SINO-MICROELECTRONICS	N-CHANNEL MOSFET Low gate charge Low Crss (typical 5pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product TO-126F ORDER MESSAGE Order codes Marking Package JCS2N70MFH-O-MF-N-B JCS2N70VH-O-V-N-B JCS2N70RH-O-R-N-B JCS2N70RH-O-
14	CS2N70A3R	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤6.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:3.8pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolu
15	CS2N70A4	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤6.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:3.8pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolut
16	CS2N70A6	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤6.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:3.8pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolut
17	CS2N70A3R1-G	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤6.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:3.8pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolut
18	JCS2N70MFH	JILIN SINO-MICROELECTRONICS	N-CHANNEL MOSFET Low gate charge Low Crss (typical 5pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product TO-126F ORDER MESSAGE Order codes Marking Package JCS2N70MFH-O-MF-N-B JCS2N70VH-O-V-N-B JCS2N70RH-O-R-N-B JCS2N70RH-O-
19	JCS2N70RH	JILIN SINO-MICROELECTRONICS	N-CHANNEL MOSFET Low gate charge Low Crss (typical 5pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product TO-126F ORDER MESSAGE Order codes Marking Package JCS2N70MFH-O-MF-N-B JCS2N70VH-O-V-N-B JCS2N70RH-O-R-N-B JCS2N70RH-O-
20	SDU02N70	SamHop Microelectronics	N-Channel MOSFET Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. D G S SDU SERIES TO-252(D-PAK) G DS SDD SERIES TO-251S(I-PAK) G DS SDD SERIES TO-251L(I-PAK) ORDERING INFORMATION Ordering Code Package SDU02N70HZ TO-252