CS2N70A6 |
Part Number | CS2N70A6 |
Manufacturer | Huajing Microelectronics |
Description | VDSS 700 V CS2N70 A6, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS... |
Features |
l Fast Switching l Low ON Resistance(Rdson≤6.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:3.8pF) l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ,Tstg TL
Parameter
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °... |
Document |
CS2N70A6 Data Sheet
PDF 234.93KB |
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