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2N7000 |
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| Part Number | 2N7000 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | bsThis Power MOSFET is the second generation of OSTMicroelectronics unique “single feature size” -strip-based process. The resulting transistor )shows extremely high packing density for low ont(sresi... |
| Features |
Type
VDSS
RDS(on) max ID
2N7000
)2N7002
60 V 60 V
< 5 Ω(@10V) 0.35 A < 5 Ω(@10V) 0.20 A
t(s ■ Low Qg uc ■ Low threshold drive rodApplication te P ■ Switching applications oleDescription bsThis Power MOSFET is the second generation of OSTMicroelectronics unique “single feature size” -strip-based process. The resulting transistor )shows extremely high packing density for low ont(sresistance, rugged avalanche characteristics and cless critical alignment steps therefore a uremarkable manufacturing reproducibility. 3 2 1 SOT23-3L TO-92 Figure 1. Internal schematic diagram Obsolete Prod ... |
| Document |
 2N7000 Data Sheet
PDF 341.67KB |
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