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MagnaChip |
Single P-Channel Trench MOSFET VDS = -30V ID = -11A @VGS = -10V RDS(ON) < 17mΩ @VGS = -10V < 27mΩ @VGS = -4.5V Applications Load Switch General purpose applications D 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) G S Absolute Maximum Ratings (Ta =25oC unless otherwi |
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MagnaChip |
N-Channel Trench MOSFET VDS = 30V ID = 16.9A @VGS = 10V RDS(ON) < 10.1mΩ @VGS = 10V < 14.9mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics |
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MagnaChip |
N-Channel Trench MOSFET VDS = 30V ID = 11.9A @VGS = 10V RDS(ON) < 18.8mΩ @VGS = 10V < 27.8mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics |
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MagnaChip |
Single P-Channel Trench MOSFET VDS = -30V ID = -12.1A @VGS = -20V RDS(ON) < 10.0mΩ @VGS = -20V < 12.1mΩ @VGS = -10V < 18.3mΩ @VGS = -5V Applications Load Switch General purpose applications Smart Module for Note PC Battery D 8(D)7(D)6(D)5(D) G 1(S)2(S)3(S)4( |
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MagnaChip |
N-Channel Trench MOSFET VDS = 30V ID = 7.2A @VGS = 10V RDS(ON) < 28mΩ @VGS = 10V < 42mΩ @VGS = 4.5V Applications Inverters General purpose applications D 5(D) 6(D) 7(D) 8(D) G 4(G) 3(S) 2(S) 1(S) Absolute Maximum Ratings (Ta =25oC unless otherwise noted) |
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MagnaChip |
N-Channel Trench MOSFET VDS = 30V ID = 16.1A @VGS = 10V RDS(ON) < 11.0mΩ @VGS = 10V < 16.4mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltag |
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MagnaChip |
Dual N-Channel Trench MOSFET à VDS = 30V à ID = 12.9A @VGS = 10V à RDS(ON) < 10.5mΩ @VGS = 10V < 16.1mΩ @VGS = 4.5V à 100% UIL Tested à 100% Rg Tested 8(D17)(D16)(D2)5(D2) 4(G2) 2(G13) (S2) 1(S1) Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage |
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MagnaChip |
Single N-Channel Trench MOSFET VDS = 30V ID = 17A @VGS = 10V RDS(ON) < 6.5mΩ @VGS = 10V < 9.5mΩ @VGS = 4.5V Applications Li-Ion Battery Application Portable Application Notebook PC Application 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) Absoloute Maximun Ratings (Ta = 25oC) Drain- |
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MagnaChip |
N-Channel MOSFET VDS = 12V ID = 15A @VGS = 4.5V RDS(ON) < 8.0 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) G 8 Leads, SOIC D S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Cha |
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MagnaChip |
N-Channel Trench MOSFET VDS = 30V ID = 13.1A @VGS = 10V RDS(ON) < 15.9mΩ @VGS = 10V < 23.7mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltag |
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MagnaChip |
N-Channel Trench MOSFET VDS = 30V ID = 16A @VGS = 10V RDS(ON) (MAX) < 5.0mΩ @VGS = 10V < 8.5mΩ @VGS = 4.5V 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) D G S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drai |
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MagnaChip |
Single N-Channel Trench MOSFET à VDS = 30V à ID = 12A @VGS = 10V à RDS(ON) < 12.0mΩ @VGS = 10V < 17.5mΩ @VGS = 4.5V Applications à DC-DC Converters 6(D) 5(D) 7(D) 8(D) D 4(G) 2(S)3(S) 1(S) Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characte |
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MagnaChip |
Single P-Channel Trench MOSFET VDS = -30V ID = -6.0A @ VGS = -10V RDS(ON) <35m @ VGS = -10V <55m @ VGS = -4.5V Applications Inverters General purpose applications 5(D) 6(D) 7(D) 8(D) D 4(G) 3(S) 2(S) 1(S) G Absolute Maximum Ratings (Ta =25oC unless otherwise noted |
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MagnaChip |
N-Channel Trench MOSFET à VDS = 30V à ID = 11.6A@VGS = 10V à RDS(ON) < 17mΩ @VGS = 10V < 22mΩ @VGS = 4.5V Applications à Portable application 5(D) 6(D) 7(D) 8(D) D 4(G) 3(S) 2(S) 1(S) Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Charac |
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MagnaChip |
P-Channel Trench MOSFET VDS = -30V ID = -12A @VGS = -10V RDS(ON) < 8.5mΩ @VGS = -20V < 10.1mΩ @VGS = -10V < 14.5mΩ @VGS = -5V Applications Load Switch General purpose applications Smart Module for Note PC Battery 5(D) 6(D) 7(D) 8(D) D 4(G) 3(S) 2(S) 1(S) G Absolute Max |
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MagnaChip |
Dual N-Channel Trench MOSFET VDS = 30V ID = 7.5A @VGS = 10V RDS(ON) < 22mΩ @VGS = 10V < 35mΩ @VGS = 4.5V Applications Portable Equipment Applications DC-DC Converter applications General purpose applications 6(D2)5(D2) 7(D1) 8(D1) D1 D2 3(S24) (G2) 2(G1) 1(S1) G1 G2 S1 S2 |
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MagnaChip |
N-channel Trench MOSFET VDS = 40V ID = 7.6 (VGS = 10V) RDS(ON) < 29mΩ @VGS = 10V < 37mΩ @ VGS = 4.5V Applications Inverters General purpose applications 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) D G S Absolute Maximum Ratings (TA =25o unless otherwise noted) Characteristi |
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MagnaChip |
P-channel Trench MOSFET VDS = -40V ID = -6.0 @ VGS = -10V RDS(ON) <45m @ VGS = -10V <60m @ VGS = -4.5V Applications Inverters General purpose applications D 4(G) 3(S) 2(S) 1(S) Absolute Maximum Ratings (TC =25o) Characteristics Drain-Source Voltage Gate-Source |
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MagnaChip |
Single N-channel Trench MOSFET VDS = 60V ID = 6A @VGS = 10V RDS(ON) < 45mΩ @ VGS = 10V < 55mΩ @ VGS = 4.5V Applications Inverters General purpose applications 5(D) 6(D) 7(D) 8(D) D 4(G) 3(S) 2(S) 1(S) G Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Dra |
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MagnaChip |
P-channel MOSFET VDS = -40V ID = -7.1A @ VGS = 10V RDS(ON) <30m @ VGS = -10V <37m @ VGS = -4.5V Applications Inverters General purpose applications D 8(D)7(D)6(D)5(D) 1(S)2(S)3(S) 4(G) G S Absolute Maximum Ratings (TA =25oC unless otherwise not |
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Desde 2024. D4U Semiconductor.
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