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MDS1652E |
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| Part Number | MDS1652E |
| Manufacturer | MagnaChip |
| Description | The MDS1652E uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. Excellent low RDS(ON), low gate char... |
| Features |
VDS = 30V ID = 16A @VGS = 10V RDS(ON) (MAX)
< 5.0mΩ @VGS = 10V < 8.5mΩ @VGS = 4.5V
5(D) 6(D) 7(D) 8(D)
4(G) 3(S) 2(S) 1(S)
D
G S
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range
TA=25oC TA=100oC
TA=25oC TA=100oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case
Apr. 2011 Rev 2.2
... |
| Document |
 MDS1652E Data Sheet
PDF 1.00MB |
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Desde 2024. D4U Semiconductor.
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