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MDS1651 |
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| Part Number | MDS1651 |
| Manufacturer | MagnaChip |
| Description | The MDS1651 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. MDS1651 is suitable device for PWM, Load Switchin... |
| Features |
à VDS = 30V à ID = 11.6A@VGS = 10V à RDS(ON)
< 17mΩ @VGS = 10V < 22mΩ @VGS = 4.5V
Applications
à Portable application
5(D) 6(D) 7(D) 8(D)
D
4(G)
3(S) 2(S) 1(S)
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current
Power Dissipation (1)
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case
G
TC=25oC TC=70oC TA=25oC TA=70oC
October 2008. Version 1.0
1
S
Symb... |
| Document |
 MDS1651 Data Sheet
PDF 637.95KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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