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MORESEMI |
N-Channel Enhancement Mode Power MOS FET ● VDS=75V；ID=60A@ VGS=10V； RDS(ON)<8.5mΩ @ VGS=10V ● Special process technology for high ESD capability ● Special designed for Convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and c |
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MORESEMI |
N-Channel MOSFET |
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MORESEMI |
N-Channel MOSFET ● VDS =30V,ID =25A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat d |
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MORESEMI |
N-Channel MOSFET ● VDS = 20V,ID = 5A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Lead Free Application ● Battery protection ● Load switch ● Power management |
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MORESEMI |
N-Channel Enhancement Mode Power MOSFET ● VDS = 20V,ID = 2.5A RDS(ON) < 100m Ω @ VGS=2.5V RDS(ON) < 65mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Battery protection ● Load switch ● Power management PIN Conf |
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MORESEMI |
N-Channel MOSFET ●VDS =20V,ID =12A RDS(ON) < 8mΩ @ VGS=10V RDS(ON) < 11mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current Application ● DC/DC Converter ● Notebook Vcore Lead Free PIN Configuration Markin |
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MORESEMI |
N-Channel Enhancement Mode Power MOSFET ● VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) <58mΩ @ VGS=10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Battery protection ● Load switch ● Power management PIN Configur |
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MORESEMI |
N-Channel Enhancement Mode Power MOSFET ● VDS = 30V,ID = 3A RDS(ON) < 75mΩ @ VGS=2.5V RDS(ON) < 65mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Lead Free Application ● Battery protection ● Load switch ● Power management |
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MORESEMI |
N-Channel Enhancement Mode Power MOSFET ● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected Application ● PWM application ● Load switch |
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MORESEMI |
N-Channel Enhancement Mode Power MOSFET ● VDS = 20V,ID = 6A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●Uni-directional Load switch ●Bi-directional Load switch Lead Fre |
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MORESEMI |
N-Channel Enhancement Mode Power MOSFET ● VDS = 20V,ID =4A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Battery protection ● Load switch ● Power management PIN Configura |
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MORESEMI |
N-Channel Enhancement Mode Power MOSFET ● VDS = 20V,ID =4A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Battery protection ● Load switch ● Power management PIN Configura |
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MORESEMI |
N-Channel Enhancement Mode Power MOSFET ● VDS = 20V,ID = 5.8A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●Uni-directional Load switch ●Bi-directional Load switch Lead F |
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MORESEMI |
600V(D-S) N-Channel Enhancement Mode Power MOS FET ● VDS =600V,ID =4A RDS(ON) <2.4 Ω @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special proce |
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MORESEMI |
N-Channel MOSFET ● VDS = 20V,ID =6.5A RDS(ON) <40mΩ @ VGS=1.8V RDS(ON) <33mΩ @ VGS=2.5V RDS(ON) <27mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected Application ● PW |
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MORESEMI |
N-Channel MOSFET ● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected Application ● PWM application ● Load switch |
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MORESEMI |
N-Channel Enhancement Mode Power MOS FET ● VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating：HBM 2300V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected Lead Free Application ●Direct logic-level in |
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MORESEMI |
N-Channel Enhancement Mode Power MOS FET ● VDS = 70V,ID =90A RDS(ON) < 7m Ω @ VGS=10V (Typ:5.9mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with hi |
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MORESEMI |
N-Channel MOSFET ● VDS =40V,ID =80A RDS(ON) <6.6mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Lead Free App |
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MORESEMI |
30V(D-S) N-Channel Enhancement Mode Power MOS FET ● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Lead Free Application ● PWM applications ● Load s |
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Desde 2024. D4U Semiconductor.
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