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MSN0212W |
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| Part Number | MSN0212W |
| Manufacturer | MORESEMI |
| Description | MSN0212W 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ●VDS =20V,ID =12A RDS(ON) < 8mΩ @ VGS=10V RDS(ON) < 11mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully ... |
| Features |
●VDS =20V,ID =12A RDS(ON) < 8mΩ @ VGS=10V RDS(ON) < 11mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current Application ● DC/DC Converter ● Notebook Vcore Lead Free PIN Configuration Marking and pin Assignment SOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0212W MSN0212W SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS ... |
| Document |
 MSN0212W Data Sheet
PDF 550.93KB |
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