MSN0325R |
Part Number | MSN0325R |
Manufacturer | MORESEMI |
Description | MSN0325R 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =25A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Ful... |
Features |
● VDS =30V,ID =25A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Lead Free Application ● SMPS and general purpose applications ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin Assignment PIN Configuration DFN 3x3 EP top view Schematic diagram Package Marking and Ordering Information Device Marking D... |
Document |
MSN0325R Data Sheet
PDF 507.47KB |
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