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MA-COM NPT DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
NPTB00004B

MA-COM
GaN Power Transistor

• GaN on Si HEMT D-Mode Transistor
• Suitable for linear and saturated applications
• Tunable from DC - 6 GHz
• 28 V Operation
• 14.8 dB Gain @ 2.5 GHz
• 57 % Drain Efficiency @ 2.5 GHz
• 100 % RF Tested
• Industry standard SOIC plastic package
• RoH
Datasheet
2
CHT3946UPNPT

Chenmko
SURFACE MOUNT Complementary Small Signal Transistor
* Small surface mounting type. (SC-88/SOT363) * Low current (Max.=200mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. (1) (6) SC-88/SOT-363 1.3±0.1
Datasheet
3
NPT1015B

MA-COM
GaN Wideband Transistor

 GaN on Si HEMT D-Mode Transistor
 Suitable for linear and saturated applications
 Tunable from DC - 3.5 GHz
 28 V Operation
 12 dB Gain @ 2.5 GHz
 54 % Drain Efficiency @ 2.5 GHz
 100 % RF Tested
 Standard metal ceramic package with bolt dow
Datasheet
4
NPT2020

MA-COM
GaN Wideband Transistor

 GaN on Si HEMT Depletion Mode Transistor
 Suitable for Linear and Saturated Applications
 Tunable from DC - 3.5 GHz
 48 V Operation
 13.5 dB Gain at 3.5 GHz
 55 % Drain Efficiency at 3.5 GHz
 100 % RF Tested
 Standard package with bolt down
Datasheet
5
NPT2020-SMB2

MA-COM
GaN Wideband Transistor

 GaN on Si HEMT Depletion Mode Transistor
 Suitable for Linear and Saturated Applications
 Tunable from DC - 3.5 GHz
 48 V Operation
 13.5 dB Gain at 3.5 GHz
 55 % Drain Efficiency at 3.5 GHz
 100 % RF Tested
 Standard package with bolt down
Datasheet
6
NPT2021

MA-COM
GaN Wideband Transistor

 GaN on Si HEMT D-Mode Transistor
 Suitable for linear and saturated applications
 Tunable from DC - 2.5 GHz
 48 V Operation
 16.5 dB Gain at 2.5 GHz
 55 % Drain Efficiency at 2.5 GHz
 100 % RF Tested
 TO-272 Package
 RoHS* Compliant and 260
Datasheet
7
NPT2022

MA-COM
HEMT D-Mode Amplifier

• GaN on Si HEMT D-Mode Amplifier
• Suitable for Linear & Saturated Applications
• Tunable from DC - 2 GHz
• 48 V Operation
• 20 dB Gain @ 900 MHz
• 60% Drain Efficiency @ 900 MHz
• 100% RF Tested
• TO-272 Package
• RoHS* Compliant and 260°C Reflow C
Datasheet



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