No. | parte # | Fabricante | Descripción | Hoja de Datos |
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MA-COM |
GaN Power Transistor • GaN on Si HEMT D-Mode Transistor • Suitable for linear and saturated applications • Tunable from DC - 6 GHz • 28 V Operation • 14.8 dB Gain @ 2.5 GHz • 57 % Drain Efficiency @ 2.5 GHz • 100 % RF Tested • Industry standard SOIC plastic package • RoH |
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Chenmko |
SURFACE MOUNT Complementary Small Signal Transistor * Small surface mounting type. (SC-88/SOT363) * Low current (Max.=200mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. (1) (6) SC-88/SOT-363 1.3±0.1 |
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MA-COM |
GaN Wideband Transistor GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications Tunable from DC - 3.5 GHz 28 V Operation 12 dB Gain @ 2.5 GHz 54 % Drain Efficiency @ 2.5 GHz 100 % RF Tested Standard metal ceramic package with bolt dow |
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MA-COM |
GaN Wideband Transistor GaN on Si HEMT Depletion Mode Transistor Suitable for Linear and Saturated Applications Tunable from DC - 3.5 GHz 48 V Operation 13.5 dB Gain at 3.5 GHz 55 % Drain Efficiency at 3.5 GHz 100 % RF Tested Standard package with bolt down |
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MA-COM |
GaN Wideband Transistor GaN on Si HEMT Depletion Mode Transistor Suitable for Linear and Saturated Applications Tunable from DC - 3.5 GHz 48 V Operation 13.5 dB Gain at 3.5 GHz 55 % Drain Efficiency at 3.5 GHz 100 % RF Tested Standard package with bolt down |
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MA-COM |
GaN Wideband Transistor GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications Tunable from DC - 2.5 GHz 48 V Operation 16.5 dB Gain at 2.5 GHz 55 % Drain Efficiency at 2.5 GHz 100 % RF Tested TO-272 Package RoHS* Compliant and 260 |
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MA-COM |
HEMT D-Mode Amplifier • GaN on Si HEMT D-Mode Amplifier • Suitable for Linear & Saturated Applications • Tunable from DC - 2 GHz • 48 V Operation • 20 dB Gain @ 900 MHz • 60% Drain Efficiency @ 900 MHz • 100% RF Tested • TO-272 Package • RoHS* Compliant and 260°C Reflow C |
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