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NPTB00004B |
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| Part Number | NPTB00004B |
| Manufacturer | MA-COM |
| Description | The NPTB00004B GaN HEMT is a power transistor optimized for DC - 6 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 5 W (37 dBm) in an industry standard... |
| Features |
• GaN on Si HEMT D-Mode Transistor • Suitable for linear and saturated applications • Tunable from DC - 6 GHz • 28 V Operation • 14.8 dB Gain @ 2.5 GHz • 57 % Drain Efficiency @ 2.5 GHz • 100 % RF Tested • Industry standard SOIC plastic package • RoHS* Compliant Applications • Defense Communications • Land Mobile Radio • Avionics • Wireless Infrastructure • ISM • VHF/UHF/L/S-Band Radar Description The NPTB00004B GaN HEMT is a power transistor optimized for DC - 6 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 5 W (37 dBm) in an industry standar... |
| Document |
 NPTB00004B Data Sheet
PDF 2.17MB |
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