NPT1015B MA-COM Transistor, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

NPT1015B

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Part Number	NPT1015B
Manufacturer	MA-COM
Description	The NPT1015 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W (46.5 dBm) in an industry sta...
Features	 GaN on Si HEMT D-Mode Transistor  Suitable for linear and saturated applications  Tunable from DC - 3.5 GHz  28 V Operation  12 dB Gain @ 2.5 GHz  54 % Drain Efficiency @ 2.5 GHz  100 % RF Tested  Standard metal ceramic package with bolt down flange  RoHS* Compliant Description The NPT1015 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W (46.5 dBm) in an industry standard metal-ceramic package with bolt down flange. The NPT1015 is ideally suited for defense communications, la...
Document	NPT1015B Data Sheet PDF 1.46MB

No.	Parte #	Fabricante	Descripción
1	NPT15	Naina Semiconductor	Press Fit Triac
2	NPT2010	Nitronex	GaN HEMT
3	NPT2018	Nitronex	GaN HEMT
4	NPT2019	Nitronex	GaN HEMT
5	NPT2020	MA-COM	GaN Wideband Transistor
6	NPT2020-SMB2	MA-COM	GaN Wideband Transistor