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KEC |
N-Channel MOSFET VDSS=600V, ID=11A Drain-Source ON Resistance : G H KP11N60D N CHANNEL MOS FIELD EFFECT TRANSISTOR A C K D L B J E N RDS(ON)(Max)=0.38 Qg(typ.)= 20nC @VGS=10V F F M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0 |
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KEC |
N-Channel MOSFET VDSS=600V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.38 Qg(typ.)= 20nC @VGS=10V O B E G DIM MILLIMETERS L M J R D N N MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed |
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KEC |
N-Channel MOSFET hVDSS=600V, ID=11A hDrain-Source ON Resistance : RDS(ON)(Max)=0.38ʃ @VGS=10V hQg(typ.)= 20nC MAXIMUM RATING (Tc=25) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single P |
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Desde 2024. D4U Semiconductor.
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