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KP11N60F |
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| Part Number | KP11N60F |
| Manufacturer | KEC |
| Description | A KP11N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR C F This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche c... |
| Features |
VDSS=600V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.38 Qg(typ.)= 20nC @VGS=10V
O
B
E
G
DIM
MILLIMETERS
L
M
J
R
D N N
MAXIMUM RATING (Tc=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25
)
Q
H
SYMBOL VDSS VGSS ID
RATING 600 30 11* 6.9*
UNIT V V
1
2
3
1. GATE 2. DRAIN 3. SOURCE
A B C D E F G H J K L M N O Q R
_ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 +... |
| Document |
 KP11N60F Data Sheet
PDF 407.51KB |
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Desde 2024. D4U Semiconductor.
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