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KP11N60 |
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| Part Number | KP11N60 |
| Manufacturer | KEC |
| Description | This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power ... |
| Features |
hVDSS=600V, ID=11A hDrain-Source ON Resistance :
RDS(ON)(Max)=0.38ʃ @VGS=10V hQg(typ.)= 20nC
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Drain Power Dissipation
Tc=25 Derate above 25
VDSS VGSS
ID IDP EAS EAR dv/dt
PD
600 30 11* 6.9* 24* 195
4.0
4.5 34.7 0.28
Maximum Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Characteristics
150 -55q150
Thermal Res... |
| Document |
 KP11N60 Data Sheet
PDF 407.51KB |
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Desde 2024. D4U Semiconductor.
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