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Jiangsu Changjiang Electronics Technology |
NPN Transistor Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction and |
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Jiangsu Changjiang Electronics |
TRANSISTOR TRANSISTOR£¨NPN £© TO¡ª 92 1.EMITTER Power dissipation PCM : 0.75 W£¨ Tamb=25¡æ£© Collector current ICM : 5 A Collector-base voltage V(BR)CBO : 42 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTE |
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Jiangsu Changjiang Electronics Technology |
TO-92 Transistors Power dissipation PCM: Collector current ICM: V (BR) CBO: 0.15 60 A V Collector-base voltage Operating and storage junction temperature range ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter voltage br |
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Jiangsu Changjiang Electronics |
NPN Transistor z Low saturation voltage z Excellent DC current gain characteristice 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC www.DataSheet4U.com Paramenter Collector-Base Voltage Collector-Emitter Voltag |
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Jiangsu Changjiang Electronics |
TRANSISTOR TRANSISTOR£¨NPN £© 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM : 0.3 W£¨ Tamb=25¡æ£© Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ Unit |
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Jiangsu Changjiang Electronics |
TRANSISTOR Power dissipation PCM : 0.625 W£¨ Tamb=25¡æ£© www.DataSheet4U.com Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡ |
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Jiangsu Changjiang Electronics |
TRANSISTOR Power dissipation PCM: 0.625 W Collector current ICM: -0.2 A Collector-base voltage V(BR)CBO : -400 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL unless CHARACTERISTICS £¨Tamb=25 ¡æ specified£© Symbol V (B |
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Jiangsu Changjiang Electronics |
TRANSISTOR Power dissipation PCM : 0.75 Collector current ICM : 0.2 TRANSISTOR£¨NPN £© W£¨ Tamb=25¡æ£© A 1. BASE 2.COLLECTOR Collector-base voltage V(BR)CBO : 600 3. EMITTER 1 2 3 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto |
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Jiangsu Changjiang Electronics |
URFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS z Low Forward Voltage Drop z Fast Switching APPLICATION Ultra high speed switching, rectifiers For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) Maximum Ratings @TA=25℃ Parameter Peak Repetitive reverse voltage DC |
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Jiangsu Changjiang Electronics |
SCHOTTKY RECTIFIER · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection High Conductance 2.70 1.6 SOD-123 Marking: B0520LW:SD B0530W:SE B0540W:SF Unit:mm Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Peak Repetitive |
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Jiangsu Changjiang Electronics |
Transistor z Low saturation voltage z Excellent DC current gain characteristice 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC www.DataSheet4U.com Paramenter Collector-Base Voltage Collector-Emitter Voltag |
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Jiangsu Changjiang Electronics |
TRANSISTOR Audio power amplifier Complement to Application 1.EMITTER 2.COLLECTOR 3.BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ, Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector C |
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Jiangsu Changjiang Electronics |
2SC4115E Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING:CFQ, CFR, CFS C TOP B www.DataSheet4U.com 1. BASE |
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Jiangsu Changjiang Electronics |
2SC4115S 1) Low VCE(sat). www.DataSheet4U.com VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SA1585S. zExternal dimensions (Unit : mm) 2SC4115S 4±0.2 2±0.2 3±0.2 (15Min.) 0.15 0.45+ −0.05 zStruct |
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Jiangsu Changjiang Electronics |
TRANSISTOR Power dissipation PCM : 1.25 W£¨ Tamb=25¡æ£© Collector current www.DataSheet4U.com ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡ |
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Jiangsu Changjiang Electronics Technology |
Three-terminal positive voltage regulator Maximum Output Current IOM: 1.5 A Output voltage Vo : -15 V 1. GND 2. IN 3. OUT ABSOLUTE MAXIMUM RATINGSO ( perating temperature range applies unless otherwise specified) Parameter Input Voltage Operating Junction Temperature Range Storage Temperat |
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Jiangsu Changjiang Electronics Technology |
TO-92 Plastic Encapsulate Transistors Power dissipation PCM: 400 mW (Tamb=25℃) 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 TRANSISTOR (NPN) TO-92 Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELEC |
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Jiangsu Changjiang Electronics |
Transistor . w dissipation Power 2. w 1 P : 0.5 W (Tamb=25℃) w 2 BASE COLLECTOR CM JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Collector current 5 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: - |
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Jiangsu Changjiang Electronics |
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS z Low Forward Voltage Drop z Fast Switching APPLICATION Ultra high speed switching, rectifiers For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) F BAT54TW Marking:KLA Maximum Ratings @TA=25℃ Parameter Peak Repetit |
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Jiangsu Changjiang Electronics |
TRANSISTOR Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER 2. COLLECTOR 3. BASE Collector current ICM: -2.5 A Collector-base voltage V(BR)CBO: -110 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb= |
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Desde 2024. D4U Semiconductor.
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