Distributor | Stock | Price | Buy |
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3DD13001 |
Part Number | 3DD13001 |
Manufacturer | Jiangsu Changjiang Electronics |
Title | TRANSISTOR |
Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR£¨NPN £© TO¡ª 92 FEATURES Power dissipation PCM : 1.25 W£¨ Tamb=25¡æ£© Collector current www.DataSheet4U.com ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junct. |
Features | Power dissipation PCM : 1.25 W£¨ Tamb=25¡æ£© Collector current www.DataSheet4U.com ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cu. |
3DD13001 |
Part Number | 3DD13001 |
Manufacturer | SeCoS |
Title | NPN Transistor |
Description | 3DD13001 Elektronische Bauelemente 0.2A , 600V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power switching applications A TO-92 D B CLASSIFICATION OF hFE(1) Product-Rank Range 3DD13001-A 17~23 3DD13001-B 20~26 G H E C F 3 Em. |
Features | Power switching applications A TO-92 D B CLASSIFICATION OF hFE(1) Product-Rank Range 3DD13001-A 17~23 3DD13001-B 20~26 G H E C F 3 Emitter J 1Base 2Collector 3Emitter Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76 1 Base Collector REF. A B C D E 2 Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 REF. F G H J K ABSOLUTE MAXIMUM RATINGS (TA=25°C un. |
3DD13001 |
Part Number | 3DD13001 |
Manufacturer | TRANSYS Electronics |
Title | Plastic-Encapsulated Transistors |
Description | Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13001 FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3EMITTER TRANSISTOR (NPN) TO-251 DataSheet4U.com Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage jun. |
Features | Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3EMITTER TRANSISTOR (NPN) TO-251 DataSheet4U.com Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltag. |
3DD13001 |
Part Number | 3DD13001 |
Manufacturer | Kexin |
Title | NPN Transistors |
Description | SMD Type NPN Transistors 3DD13001 Transistors ■ Features ● Collector-emitter Voltage: V(BR)CEO=400V ● Collector Current: IC=0.2A 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base. |
Features |
● Collector-emitter Voltage: V(BR)CEO=400V ● Collector Current: IC=0.2A 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 600 400 7 0.2. |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 3DD13001A |
JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
2 | 3DD13001A1 |
Huajing Microelectronics |
Silicon NPN Transistor | |
3 | 3DD13001B |
JCST |
TO-92 Plastic-Encapsulate Transistors | |
4 | 3DD13001H |
JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
5 | 3DD13001P1 |
Huajing Microelectronics |
NPN Transistor | |
6 | 3DD13001S |
JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
7 | 3DD13002 |
GME |
High Voltage Fast Switching NPN Power Transistor | |
8 | 3DD13002 |
Kexin |
NPN Transistors | |
9 | 3DD13002 |
TRANSYS Electronics |
Plastic-Encapsulated Transistors | |
10 | 3DD13002 |
Jiangsu Changjiang |
TRANSISTOR |