Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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3DD13002 |
| Part Number | 3DD13002 |
| Manufacturer | GME |
| Title | High Voltage Fast Switching NPN Power Transistor |
| Description | Production specification High Voltage Fast Switching NPN Power Transistor 3DD13002 FEATURES High speed switching. Small flat package. Pb Lead-free APPLICATIONS High voltage switch mode application. ORDERING INFORMATION Type No. Marking 3DD13002 13002 SOT-89S Package Code SOT-89S MAX. |
| Features |
High speed switching. Small flat package. Pb Lead-free APPLICATIONS High voltage switch mode application. ORDERING INFORMATION Type No. Marking 3DD13002 13002 SOT-89S Package Code SOT-89S MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 600 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 6 IC Collector Cu. |
3DD13002 |
| Part Number | 3DD13002 |
| Manufacturer | Jiangsu Changjiang |
| Title | TRANSISTOR |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002/ 3DD13002B FEATURE Power dissipation PCM: Collector current ICM: 900 TRANSISTOR (NPN) TO-92 1. EMITTER mW (Tamb=25℃) 2. COLLECTOR 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage 6. |
| Features | Power dissipation PCM: Collector current ICM: 900 TRANSISTOR (NPN) TO-92 1. EMITTER mW (Tamb=25℃) 2. COLLECTOR 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter. |
3DD13002 |
| Part Number | 3DD13002 |
| Manufacturer | SeCoS |
| Title | NPN Transistor |
| Description | Elektronische Bauelemente 3DD13002 0.8A, 600V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power switching applications 3 Base TO-92 AD B Collector 2 E CF 1 Emitter G H 1Emitter 2Collector J 3Base REF. A B C D E F G H . |
| Features | Power switching applications 3 Base TO-92 AD B Collector 2 E CF 1 Emitter G H 1Emitter 2Collector J 3Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Collector to Base Voltage Collector to Emitter . |
3DD13002 |
| Part Number | 3DD13002 |
| Manufacturer | Kexin |
| Title | NPN Transistors |
| Description | SMD Type NPN Transistors 3DD13002 Transistors ■ Features ● Collector Current Capability IC=1A ● Collector Emitter Voltage VCEO=400V ● Power Switching Applications 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Co. |
| Features |
● Collector Current Capability IC=1A ● Collector Emitter Voltage VCEO=400V ● Power Switching Applications 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symb. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3DD13001 |
GME |
High Voltage Fast Switching NPN Power Transistor |
|
| 2 | 3DD13001 |
Jiangsu Changjiang Electronics |
TRANSISTOR |
|
| 3 | 3DD13001 |
TRANSYS Electronics |
Plastic-Encapsulated Transistors |
|
| 4 | 3DD13001 |
SeCoS |
NPN Transistor |
|
| 5 | 3DD13001 |
Kexin |
NPN Transistors |
|
| 6 | 3DD13001 |
WEJ |
NPN Transistor |
|
| 7 | 3DD13001A |
JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
| 8 | 3DD13001A1 |
Huajing Microelectronics |
Silicon NPN Transistor |
|
| 9 | 3DD13001B |
JCST |
TO-92 Plastic-Encapsulate Transistors |
|
| 10 | 3DD13001H |
JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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