| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Intersil Corporation |
2A/ 500V/ 2.50 Ohm/ Rad Hard/ N-Channel Power MOSFET • 2A, 500V, rDS(ON) = 2.50Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Of |
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Intersil Corporation |
8A/ 100V/ 0.230 Ohm/ Rad Hard/ N-Channel Power MOSFET • 8A, 100V, rDS(ON) = 0.230Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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Intersil Corporation |
4A/ 250V/ 0.610 Ohm/ Rad Hard/ N-Channel Power MOSFET • 4A, 250V, rDS(ON) = 0.610Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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Intersil Corporation |
5A/ 200V/ 0.460 Ohm/ Rad Hard/ N-Channel Power MOSFET • 5A, 200V, rDS(ON) = 0.460Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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Intersil Corporation |
11A/ 100V/ 0.210 Ohm/ Rad Hard/ N-Channel Power MOSFET • 11A, 100V, rDS(ON) = 0.210Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
24A/ 200V/ 0.110 Ohm/ Rad Hard/ N-Channel Power MOSFET • 24A, 200V, rDS(ON) = 0.110Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFET • 23A, 200V, rDS(ON) = 0.115Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 12nA Per-RAD(Si)/s Typically |
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Intersil Corporation |
8A/ 200V/ 0.440 Ohm/ Rad Hard/ N-Channel Power MOSFET • 8A, 200V, rDS(ON) = 0.440Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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Intersil Corporation |
22A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFET • 22A, -100V, rDS(ON) = 0.140Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET • 25A (Note), 100V, rDS(ON) = 0.070Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS |
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Intersil Corporation |
4A/ 250V/ 0.700 Ohm/ Rad Hard/ N-Channel Power MOSFET • 4A, 250V, rDS(ON) = 0.700Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 4nA Per-RAD(Si)/s Typically • |
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Intersil Corporation |
25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET • 25A, 100V, rDS(ON) = 0.070Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 7.0nA Per-RAD(Si)/s Typically |
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Intersil Corporation |
6A/ 250V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET • 6A, 250V, rDS(ON) = 0.600Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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Intersil Corporation |
3A/ 500V/ 2.70 Ohm/ Rad Hard/ N-Channel Power MOSFET • 3A, 500V, rDS(ON) = 2.70Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Of |
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Intersil Corporation |
15A/ -200V/ 0.290 Ohm/ Rad Hard/ P-Channel Power MOSFET • 15A, -200V, rDS(ON) = 0.290Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
Formerly Available As FSF254R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs • 18A, 250V, rDS(ON) = 0.170Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET • 3.5A, 100V, rDS(ON) = 0.600Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ P-Channel Power MOSFET • 2.5A, -100V, rDS(ON) = 1.30Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
8A/ 100V/ 0.180 Ohm/ Rad Hard/ N-Channel Power MOSFET • 8A, 100V, rDS(ON) = 0.180Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 1.5nA Per-RAD(Si)/s Typically |
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Intersil Corporation |
5A/ 200V/ 0.500 Ohm/ Rad Hard/ N-Channel Power MOSFET • 5A, 200V, rDS(ON) = 0.500Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 3nA Per-RAD(Si)/s Typically • |
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Desde 2024. D4U Semiconductor.
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