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Intersil Corporation |
N-Channel Power MOSFET • 30A, 50V • rDS(ON) = 0.040Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Com |
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Intersil Corporation |
N-Channel Power MOSFET • 3A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 1.800Ω (BUZ76) field effect transistor designed for applications such as • SOA is Power Dissipation Limited /Subject switching regulators, switching converters, |
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Intersil Corporation |
N-Channel Power MOSFET • 12A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.200Ω (BUZ20 field effect transistor designed for applications such as • SOA is Power Dissipation Limited ) switching regulators, switching converters, motor d |
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Intersil Corporation |
N-Channel Power MOSFET • 4A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 2.000Ω (BUZ42 field effect transistor designed for applications such as • SOA is Power Dissipation Limited ) switching regulators, switching converters, motor dr |
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Intersil Corporation |
N-Channel Power MOSFET • 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.500Ω (BUZ45 field effect transistor designed for applications such as • SOA is Power Dissipation Limited B) switching regulators, switching converters, motor |
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Intersil Corporation |
N-Channel Power MOSFET |
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Intersil Corporation |
N-Channel Power MOSFET • 9.5A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.400Ω (BUZ32) field effect transistor designed for applications such as • SOA is Power Dissipation Limited /Subject switching regulators, switching converters |
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Intersil Corporation |
N-Channel Power MOSFET |
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Intersil Corporation |
N-Channel Power MOSFET • 9.6A, 500V [ /Title IThis is an N-Channel enhancement mode silicon gate • rDS(ON) = 0.600Ω (BUZ45) power field effect transistor designed for applications such • SOA is Power Dissipation Limited /Subject as switching regulators, switching converter |
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Intersil Corporation |
N-Channel Power MOSFET • 8.3A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.800Ω (BUZ45 field effect transistor designed for applications such as • SOA is Power Dissipation Limited A) switching regulators, switching converters, motor |
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Intersil Corporation |
N-Channel Power MOSFET |
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Intersil Corporation |
N-Channel Power MOSFET • 14A, 50V • rDS(ON) = 0.100Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Com |
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Intersil Corporation |
N-Channel Power MOSFET • 13A, 50V • rDS(ON) = 0.120Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Com |
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Intersil Corporation |
N-Channel Power MOSFET • 9A, 100V • rDS(ON) = 0.250Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Com |
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Intersil Corporation |
N-Channel Power MOSFET • 5.8A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.600Ω (BUZ73 field effect transistor designed for applications such as • SOA is Power Dissipation Limited A) switching regulators, switching converters, motor |
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Intersil Corporation |
N-Channel Power MOSFET • 2.6A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 2.500Ω (BUZ76 field effect transistor designed for applications such as • SOA is Power Dissipation Limited A) switching regulators, switching converters, motor |
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Intersil Corporation |
N-Channel Power MOSFET • 4.5A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 1.500Ω (BUZ41 field effect transistor designed for applications such as • SOA is Power Dissipation Limited A) switching regulators, switching converters, motor |
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Desde 2024. D4U Semiconductor.
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