BUZ45 |
Part Number | BUZ45 |
Manufacturer | Intersil Corporation |
Description | BUZ45 Semiconductor Data Sheet October 1998 File Number 2257.1 9.6A, 500V, 0.600 Ohm, N-Channel Power MOSFET Features • 9.6A, 500V [ /Title IThis is an N-Channel enhancement mode silicon gate • ... |
Features |
• 9.6A, 500V [ /Title IThis is an N-Channel enhancement mode silicon gate • rDS(ON) = 0.600Ω (BUZ45) power field effect transistor designed for applications such • SOA is Power Dissipation Limited /Subject as switching regulators, switching converters, motor drivers, • Nanosecond Switching Speeds (9.6A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 500V, • Linear Transfer Characteristics This type can be operated directly from integrated circuits. 0.600 • High Input Impedance Ohm, N- Formerly developmental type TA17435. •... |
Document |
BUZ45 Data Sheet
PDF 12.11KB |
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