BUZ73A |
Part Number | BUZ73A |
Manufacturer | Intersil Corporation |
Description | BUZ73A Semiconductor Data Sheet October 1998 File Number 2263.1 5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET Features • 5.8A, 200V [ /Title This is an N-Channel enhancement mode silicon gate po... |
Features |
• 5.8A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.600Ω (BUZ73 field effect transistor designed for applications such as • SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching • Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (5.8A, • Linear Transfer Characteristics This type can be operated directly from integrated circuits. 200V, • High Input Impedance 0.600 Formerly developmental type TA4600. • Majorit... |
Document |
BUZ73A Data Sheet
PDF 42.67KB |
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