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| Part Number | BUZ73 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BUZ73 |
| Manufacturer | Siemens Semiconductor Group |
| Title | Power Transistor |
| Description | BUZ 73 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 73 VDS 200 V ID 7A RDS(on) 0.4 Ω Package TO-220 AB Ordering Code C67078-S1317-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 7 Unit A ID IDpuls 28 TC . |
| Features | Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 200 3 0.1 10 10 0.3 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 200 V, VGS = 0 V, Tj = 25 °C VDS = 200 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.4 VGS = 20 V, VDS = 0 V Drai. |
| Part Number | BUZ73 |
| Manufacturer | Infineon Technologies AG |
| Title | Power Transistor |
| Description | SIPMOS ® Power Transistor BUZ 73 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 200 V ID 7A RDS(on) 0.4 Ω Package Ordering Code BUZ 73 TO-220 AB C67078-S1317-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 28 ˚C ID . |
| Features | min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS V 200 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current VDS = 200 V, V GS = 0 V, Tj = 25 ˚C VDS = 200 V, V GS = 0 V, Tj = 125 ˚C IGSS 0.1 10 1 100 nA Gate-source leakage current VGS = 20 V, VDS = 0 V RDS(. |
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Desde 2024. D4U Semiconductor.
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