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| Part Number | BUZ73A |
| Distributor | Stock | Price | Buy |
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| Part Number | BUZ73A |
| Manufacturer | Comset Semiconductors |
| Title | N-Channel Enhancement Mode Power MOS Transistors |
| Description | SEMICONDUCTORS BUZ73A N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE This is an N-channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipo. |
| Features | This is an N-channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits and housed in a TO-220 envelope. ABSOLUTE MAXI. |
| Part Number | BUZ73A |
| Manufacturer | Siemens Semiconductor Group |
| Title | Power Transistor |
| Description | BUZ 73 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 73 A VDS 200 V ID 5.5 A RDS(on) 0.6 Ω Package TO-220 AB Ordering Code C67078-S1317-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 5.5 Unit A ID IDpul. |
| Features | ymbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 200 3 0.1 10 10 0.5 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 200 V, VGS = 0 V, Tj = 25 °C VDS = 200 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.6 VGS = 20 V, VDS. |
| Part Number | BUZ73A |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFET |
| Description | BUZ73A Semiconductor Data Sheet October 1998 File Number 2263.1 5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET Features • 5.8A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.600Ω (BUZ73 field effect transistor designed for applications such as • SOA is Powe. |
| Features |
• 5.8A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.600Ω (BUZ73 field effect transistor designed for applications such as • SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching • Nanosecond Switching Speeds transistors requiring high speed and low . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUZ73 |
Siemens Semiconductor Group |
Power Transistor |
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| 2 | BUZ73 |
Infineon Technologies AG |
Power Transistor |
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| 3 | BUZ73 |
INCHANGE |
N-Channel MOSFET |
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| 4 | BUZ73AL |
Siemens Semiconductor Group |
Power Transistor |
|
| 5 | BUZ73AL |
Infineon Technologies AG |
Power Transistor |
|
| 6 | BUZ73L |
Siemens Semiconductor Group |
Power Transistor |
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| 7 | BUZ73L |
Infineon Technologies AG |
Power Transistor |
|
| 8 | BUZ73LH |
Infineon |
Power Transistor |
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| 9 | BUZ70 |
Siemens Semiconductor Group |
Power Transistor |
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| 10 | BUZ70L |
Siemens Semiconductor Group |
Power Transistor |
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