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International Rectifier |
IRG4PC50W • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • |
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International Rectifier |
IRG4PC50UD • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM u |
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International Rectifier |
IRG4PF50W f.com/package/ |
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International Rectifier |
IRG4PC40K • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-247AC package C Sh |
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International Rectifier |
IRG4PC50U • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC packag |
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International Rectifier |
IRG4PC30S • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C G E n-chan |
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International Rectifier |
PDP TRENCH IGBT l Advanced Trench IGBT Technology Key Parameters VCE min 600 V l Optimized for Sustain and Energy Recovery circuits in PDP applications c VCE(ON) typ. @ IC = 40A IRP max @ TC= 25°C 1.70 225 V A l Low VCE(on) and Energy per Pulse (EPULSETM) |
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International Rectifier |
PDP Trench IGBT Key Parameters l Advanced Trench IGBT Technology VCE min 330 V l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 20A 1.35 V circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficien |
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International Rectifier |
IRG4PH40UD • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDT |
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International Rectifier |
IRG4BC40U • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB packag |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra fas |
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International Rectifier |
IRG4BC30FD C • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than G Generation 3 • IGBT co-packaged with HE |
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International Rectifier |
IRG4BC30W • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR C • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA G • 100% of the parts tested for ILM • Positive VCE (ON) Temperature co-efficient • Ultra fast soft R |
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International Rectifier |
IRG4PH50UD • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode www.DataSheet4U.com • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-pa |
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International Rectifier |
IRG4BH20K-L • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency |
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International Rectifier |
IRG4BC30UD • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM u |
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International Rectifier |
IRG4PH30KD • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT |
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International Rectifier |
IRGB15B60KD • Low VCE (on) Non Punch Through IGBT Technology. www.DataSheet4U.com • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, |
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International Rectifier |
IRG4BC20U • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB packag |
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Desde 2024. D4U Semiconductor.
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