G4BC30FD |
Part Number | G4BC30FD |
Manufacturer | International Rectifier |
Description | PD -91451B IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in ... |
Features |
C
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than G Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in E n-channel bridge configurations • Industry standard TO-220AB package Benefits • Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery c... |
Document |
G4BC30FD Data Sheet
PDF 402.05KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | G4BC30KD |
International Rectifier |
IRG4BC30KD | |
2 | G4BC30UD |
International Rectifier |
IRG4BC30UD | |
3 | G4BC30W |
International Rectifier |
IRG4BC30W | |
4 | G4BC20F |
International Rectifier |
IRG4BC20F | |
5 | G4BC20FD |
International Rectifier |
IRG4BC20FD | |
6 | G4BC20KD |
International Rectifier |
IRG4BC20KD | |
7 | G4BC20U |
International Rectifier |
IRG4BC20U | |
8 | G4BC20UD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
9 | G4BC40F |
International Rectifier |
IRG4BC40F | |
10 | G4BC40S |
International Rectifier |
IRG4BC40S |