Description | PD -91595A IRG4BC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distributio... |
Features |
• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ... |
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![]() International Rectifier |
IRG4BC30FD |
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![]() International Rectifier |
IRG4BC30UD |
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![]() International Rectifier |
IRG4BC30W |
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![]() International Rectifier |
IRG4BC20F |
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![]() International Rectifier |
IRG4BC20FD |
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![]() International Rectifier |
IRG4BC20KD |
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![]() International Rectifier |
IRG4BC20U |
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![]() International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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![]() International Rectifier |
IRG4BC40F |
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![]() International Rectifier |
IRG4BC40S |
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Desde 2024. D4U Semiconductor.
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