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G4BC40F |
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| Part Number | G4BC40F |
| Manufacturer | International Rectifier |
| Description | PD - 91454B IRG4BC40F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design ... |
| Features |
• Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.50V @VGE = 15V, IC = 27A n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parame... |
| Document |
 G4BC40F Data Sheet
PDF 165.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | G4BC40S |
International Rectifier |
IRG4BC40S |
|
| 2 | G4BC40U |
International Rectifier |
IRG4BC40U |
|
| 3 | G4BC20F |
International Rectifier |
IRG4BC20F |
|
| 4 | G4BC20FD |
International Rectifier |
IRG4BC20FD |
|
| 5 | G4BC20KD |
International Rectifier |
IRG4BC20KD |
|
| 6 | G4BC20U |
International Rectifier |
IRG4BC20U |
|
| 7 | G4BC20UD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 8 | G4BC30FD |
International Rectifier |
IRG4BC30FD |
|
| 9 | G4BC30KD |
International Rectifier |
IRG4BC30KD |
|
| 10 | G4BC30UD |
International Rectifier |
IRG4BC30UD |
|
Desde 2024. D4U Semiconductor.
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