International Rectifier GB1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	GB15B60KD	International Rectifier	IRGB15B60KD • Low VCE (on) Non Punch Through IGBT Technology. www.DataSheet4U.com • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. G E tsc > 10µs,
2	GB10B60KD	International Rectifier	INSULATED GATE BIPOLAR TRANSISTOR • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits •
3	GB14C40L	International Rectifier	IRGB14C40L Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended fo
4	M3GB12012D	International Rectifier	HYBRID-HIGH RELIABILITY RADIATION HARDENED DC-DC CONVERTER  Total Dose > 200 kRads(Si) typically usable to > 300 kRads(Si)  SEE Hardened to LET up to 82 MeV ·cm2/mg  Low Input & Output Noise  Low Weight < 110 grams  Magnetically Coupled Feedback  95V to 140V DC Input Range  Up to 40W Output Pow
5	M3GB12005D	International Rectifier	HYBRID-HIGH RELIABILITY RADIATION HARDENED DC-DC CONVERTER  Total Dose > 200 kRads(Si) typically usable to > 300 kRads(Si)  SEE Hardened to LET up to 82 MeV ·cm2/mg  Low Input & Output Noise  Low Weight < 110 grams  Magnetically Coupled Feedback  95V to 140V DC Input Range  Up to 40W Output Pow
6	M3GB12015D	International Rectifier	HYBRID-HIGH RELIABILITY RADIATION HARDENED DC-DC CONVERTER  Total Dose > 200 kRads(Si) typically usable to > 300 kRads(Si)  SEE Hardened to LET up to 82 MeV ·cm2/mg  Low Input & Output Noise  Low Weight < 110 grams  Magnetically Coupled Feedback  95V to 140V DC Input Range  Up to 40W Output Pow
7	M3GB12015S	International Rectifier	HYBRID-HIGH RELIABILITY RADIATION HARDENED DC-DC CONVERTER  Total Dose > 200 kRads(Si) typically usable to > 300 kRads(Si)  SEE Hardened to LET up to 82 MeV ·cm2/mg  Low Input & Output Noise  Low Weight < 110 grams  Magnetically Coupled Feedback  95V to 140V DC Input Range  Up to 40W Output Pow
8	M3GB12028S	International Rectifier	HYBRID-HIGH RELIABILITY RADIATION HARDENED DC-DC CONVERTER  Total Dose > 200 kRads(Si) typically usable to > 300 kRads(Si)  SEE Hardened to LET up to 82 MeV ·cm2/mg  Low Input & Output Noise  Low Weight < 110 grams  Magnetically Coupled Feedback  95V to 140V DC Input Range  Up to 40W Output Pow
9	M3GB12005S	International Rectifier	HYBRID-HIGH RELIABILITY RADIATION HARDENED DC-DC CONVERTER  Total Dose > 200 kRads(Si) typically usable to > 300 kRads(Si)  SEE Hardened to LET up to 82 MeV ·cm2/mg  Low Input & Output Noise  Low Weight < 110 grams  Magnetically Coupled Feedback  95V to 140V DC Input Range  Up to 40W Output Pow
10	M3GB12003R3S	International Rectifier	HYBRID-HIGH RELIABILITY RADIATION HARDENED DC-DC CONVERTER  Total Dose > 200 kRads(Si) typically usable to > 300 kRads(Si)  SEE Hardened to LET up to 82 MeV ·cm2/mg  Low Input & Output Noise  Low Weight < 110 grams  Magnetically Coupled Feedback  95V to 140V DC Input Range  Up to 40W Output Pow
11	IRGB14C40L	International Rectifier	INSULATED GATE BIPOLAR TRANSISTOR Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended fo
12	GB15RF120K	International Rectifier	IGBT PIM MODULE • Low VCE (on) Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient • Ceramic DB
13	M3GB12012S	International Rectifier	HYBRID-HIGH RELIABILITY RADIATION HARDENED DC-DC CONVERTER  Total Dose > 200 kRads(Si) typically usable to > 300 kRads(Si)  SEE Hardened to LET up to 82 MeV ·cm2/mg  Low Input & Output Noise  Low Weight < 110 grams  Magnetically Coupled Feedback  95V to 140V DC Input Range  Up to 40W Output Pow
14	IRGB15B60KDPbF	International Rectifier	INSULATED GATE BIPOLAR TRANSISTOR • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free C IRGB15B60KDPbF IRGS15B6
15	IRGB10B60KD	International Rectifier	INSULATED GATE BIPOLAR TRANSISTOR • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits •
16	IRGB15B60KD	International Rectifier	INSULATED GATE BIPOLAR TRANSISTOR • Low VCE (on) Non Punch Through IGBT Technology. www.DataSheet4U.com • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. G E tsc > 10µs,
17	GB10RF120K	International Rectifier	IGBT PIM MODULE • Low VCE (on) Non Punch Through IGBT Technology • Low Diode VF • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient • Ceramic DBC Subs
18	IRGB10B60KDPBF	International Rectifier	INSULATED GATE BIPOLAR TRANSISTOR • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free G E tsc > 10µs, TJ=150°C
19	IRGB14C40LPBF	International Rectifier	IGBT Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy Lead-Free Description The advanced IGBT process family includes a MOS gated, N-channel logic leve
20	14C40L	International Rectifier	IRGB14C40L Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended fo