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IRGB10B60KD |
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| Part Number | IRGB10B60KD |
| Manufacturer | International Rectifier |
| Description | PD - 94382D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KD IRGS10B60KD IRGSL10B60KD VCES = 600V IC = 12A, TC=100°C Features • Low VCE (on) Non Punch Through IGBT... |
| Features |
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO-220AB IRGB10B60KD D2Pak IRGS10B60KD Max. 600 22 12 44 44 22 10 44 ± 20 156 62 -55 to +150 TO-262 IRGSL10B60KD Units V Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC ... |
| Document |
 IRGB10B60KD Data Sheet
PDF 327.20KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | IRGB10B60KDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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| 2 | IRGB14C40L |
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INSULATED GATE BIPOLAR TRANSISTOR |
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| 3 | IRGB14C40LPBF |
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| 4 | IRGB15B60KD |
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INSULATED GATE BIPOLAR TRANSISTOR |
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| 5 | IRGB15B60KDPbF |
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INSULATED GATE BIPOLAR TRANSISTOR |
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| 6 | IRGB20B60PD1 |
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SMPS IGBT |
|
Desde 2024. D4U Semiconductor.
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