International Rectifier F63 Hoja de datos

No.	parte #	Fabricante	Descripción
1	F630NS	International Rectifier	IRF630NS nt power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its l
2	IRF630N	International Rectifier	Power MOSFET ble of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connectio
3	IRF630NL	International Rectifier	Power MOSFET ble of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connectio
4	IRF630NS	International Rectifier	Power MOSFET ble of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connectio
5	IRHLF630Z4	International Rectifier	(IRHLF6x0Z4) POWER MOSFET n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary P-Channel Available IRHLF6970Z4 Absol
6	IRHF63230	International Rectifier	Power MOSFET n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V,
7	IRF630PBF	International Rectifier	POWER MOSFET 3) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 10.54 (.415) 10.29 (.405) 4 3.78 (.149) 3.54 (.139) -A- 6.47 (.255) 6.10 (.240) 1 23 1.15 (.045) MIN 4.06 (.160) 3.55 (.140) 4.69 (.185) 4.20 (.165) -B- 1.32 (.052) 1.22 (.048)
8	IRF634	International Rectifier	Power MOSFET
9	IRF634N	International Rectifier	Power MOSFET the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The t
10	IRF634NL	International Rectifier	Power MOSFET the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The t
11	IRF634NS	International Rectifier	Power MOSFET the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The t
12	IRF634S	International Rectifier	Power MOSFET
13	IRF630NLPBF	International Rectifier	Power MOSFET d the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The t
14	IRF630NSPBF	International Rectifier	Power MOSFET d the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The t
15	IRF630NPBF	International Rectifier	Power MOSFET d the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The t
16	IRF634NLPbF	International Rectifier	HEXFET Power MOSFET pability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount applic
17	IRF634NSPbF	International Rectifier	HEXFET Power MOSFET pability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount applic
18	IRF634NPbF	International Rectifier	HEXFET Power MOSFET pability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount applic