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F630NS |
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| Part Number | F630NS |
| Manufacturer | International Rectifier |
| Description | l l HEXFET® Power MOSFET D VDSS = 200V RDS(on) = 0.30Ω G S Fifth Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r... |
| Features |
nt power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF630NL) is available for lowprofile application.
ID = 9.3A
TO-220AB IRF630N
D2Pak IRF630NS
TO-262 IRF630NL
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt T... |
| Document |
 F630NS Data Sheet
PDF 180.18KB |
Desde 2024. D4U Semiconductor.
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