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IRF634NS |
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| Part Number | IRF634NS |
| Manufacturer | International Rectifier |
| Description | l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ... |
| Features |
the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF634NL) is available for lowprofile application.
IRF634N IRF634NS IRF634NL
HEXFET® Power MOSFET
D
VDSS = 250V RDS(on) = 0.435Ω
G S
ID = 8.0A
TO-220AB IRF634N
D2Pak IRF634NS
TO-262 IRF634NL
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Co... |
| Document |
 IRF634NS Data Sheet
PDF 301.06KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF634N |
International Rectifier |
Power MOSFET |
|
| 2 | IRF634N |
Vishay |
Power MOSFET |
|
| 3 | IRF634NL |
International Rectifier |
Power MOSFET |
|
| 4 | IRF634NL |
Vishay |
Power MOSFET |
|
| 5 | IRF634NLPbF |
International Rectifier |
HEXFET Power MOSFET |
|
| 6 | IRF634NPbF |
International Rectifier |
HEXFET Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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