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International Rectifier |
IRF540NS e applications. G Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation |
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International Rectifier |
Power MOSFET rent, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 1 |
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International Rectifier |
Power MOSFET e applications. G Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation |
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International Rectifier |
Power MOSFET e applications. G Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation |
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International Rectifier |
Power MOSFET 40NL) is available for low- profile applications. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drai |
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International Rectifier |
Power MOSFET 40NL) is available for low- profile applications. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drai |
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International Rectifier |
HEXFET POWER MOSFET |
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International Rectifier |
HEXFET Power MOSFET l l l l l l l AUIRF540Z AUIRF540ZS HEXFET® Power MOSFET V(BR)DSS Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified |
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International Rectifier |
HEXFET Power MOSFET l l l l l l l AUIRF540Z AUIRF540ZS HEXFET® Power MOSFET V(BR)DSS Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified |
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RFE International |
(UF5400 - UF5407) High Efficiency Super Fast Rectifier R306 UF5406 3.0 A 600 150 1.7 75 10 HER307 UF5407 3.0 A 800 150 1.7 75 10 HER601 6.0 A 50 200 1.0 60 10 HER602 6.0 A 100 200 1.0 60 10 HER603 6.0 A 200 200 1.0 60 10 HER604 6.0 A 300 200 1.0 60 10 HER605 6.0 A 400 200 1.3 60 10 HER606 6.0 A 600 200 1 |
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RFE International |
(UF5400 - UF5407) High Efficiency Super Fast Rectifier R306 UF5406 3.0 A 600 150 1.7 75 10 HER307 UF5407 3.0 A 800 150 1.7 75 10 HER601 6.0 A 50 200 1.0 60 10 HER602 6.0 A 100 200 1.0 60 10 HER603 6.0 A 200 200 1.0 60 10 HER604 6.0 A 300 200 1.0 60 10 HER605 6.0 A 400 200 1.3 60 10 HER606 6.0 A 600 200 1 |
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International Rectifier |
Power MOSFET GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 secon |
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RFE International |
(UF5400 - UF5407) High Efficiency Super Fast Rectifier R306 UF5406 3.0 A 600 150 1.7 75 10 HER307 UF5407 3.0 A 800 150 1.7 75 10 HER601 6.0 A 50 200 1.0 60 10 HER602 6.0 A 100 200 1.0 60 10 HER603 6.0 A 200 200 1.0 60 10 HER604 6.0 A 300 200 1.0 60 10 HER605 6.0 A 400 200 1.3 60 10 HER606 6.0 A 600 200 1 |
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International Rectifier |
(IRHF5x034) RADIATION HARDENED POWER MOSFET THRU-HOLE n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute M |
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International Rectifier |
AUTOMOTIVE MOSFET ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 100V RDS(on) = 26.5mΩ S Description Specifically designed for Automotive applications, this |
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RFE International |
High Efficiency Super Fast Rectifier R306 UF5406 3.0 A 600 150 1.7 75 10 HER307 UF5407 3.0 A 800 150 1.7 75 10 HER601 6.0 A 50 200 1.0 60 10 HER602 6.0 A 100 200 1.0 60 10 HER603 6.0 A 200 200 1.0 60 10 HER604 6.0 A 300 200 1.0 60 10 HER605 6.0 A 400 200 1.3 60 10 HER606 6.0 A 600 200 1 |
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RFE International |
(UF5400 - UF5407) High Efficiency Super Fast Rectifier R306 UF5406 3.0 A 600 150 1.7 75 10 HER307 UF5407 3.0 A 800 150 1.7 75 10 HER601 6.0 A 50 200 1.0 60 10 HER602 6.0 A 100 200 1.0 60 10 HER603 6.0 A 200 200 1.0 60 10 HER604 6.0 A 300 200 1.0 60 10 HER605 6.0 A 400 200 1.3 60 10 HER606 6.0 A 600 200 1 |
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RFE International |
(UF5400 - UF5407) High Efficiency Super Fast Rectifier R306 UF5406 3.0 A 600 150 1.7 75 10 HER307 UF5407 3.0 A 800 150 1.7 75 10 HER601 6.0 A 50 200 1.0 60 10 HER602 6.0 A 100 200 1.0 60 10 HER603 6.0 A 200 200 1.0 60 10 HER604 6.0 A 300 200 1.0 60 10 HER605 6.0 A 400 200 1.3 60 10 HER606 6.0 A 600 200 1 |
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International Rectifier |
RADIATION HARDENED POWER MOSFET n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically |
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International Rectifier |
RADIATION HARDENED POWER MOSFET n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically |
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Desde 2024. D4U Semiconductor.
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