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F540NS |
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| Part Number | F540NS |
| Manufacturer | International Rectifier |
| Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi... |
| Features |
e applications.
G
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC RθJA
Parameter Junction-to-Case Junction-to-Ambient (PCB mount)**
www.irf.com
... |
| Document |
 F540NS Data Sheet
PDF 271.04KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | F546L |
Fox Electronics |
HCMOS 5x3.2mm 2.5V SMD Oscillator |
|
| 2 | F546LR |
Fox Electronics |
HCMOS 5x3.2mm 2.5V SMD Oscillator |
|
| 3 | F5-75R06KE3_B5 |
Infineon |
IGBT |
|
| 4 | F5001 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR |
|
| 5 | F5001H |
Fuji Electric |
INTELIGENT POWER SWITCH |
|
| 6 | F5019 |
CSF |
Froide |
|
Desde 2024. D4U Semiconductor.
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