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Infineon Technologies |
IGBT TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •complete |
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Infineon Technologies |
Reverse Conducting IGBT • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages ® • TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable b |
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Infineon Technologies |
IGBT Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE = 600V, Tj = 175C, tp = 1µs Diode forward current, limited by Tjmax Diode pulsed current, tp limited by Tjmax TC = 25C TC = 100C Gate-emitter voltage Short circui |
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Infineon Technologies |
IGBT E PG-TO-220-3-1 Type IKP10N60T PG-TO-220-3-1 Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, |
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Infineon Technologies |
IGBT Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very |
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Infineon Technologies |
High speed 5 IGBT andBenefits: HighspeedH5technologyoffering •UltralowlossswitchingthankstoKelvinemitterpinin combinationwithTRENCHSTOPTM5 •Best-in-classefficiencyinhardswitchingandresonant topologies •Plugandplayreplacementofpreviousge |
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Infineon Technologies |
IGBT •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat •LowEMI •Q |
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Infineon Technologies |
Fast IGBT wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C 2 C E PG-TO-247-3 VCE 1200V IC 25A Eoff 2.9mJ Tj 150°C Marking K25N120 Package PG-TO-247-3 Symbol VCE IC Value 1200 46 25 Unit V A ICpuls IF 84 84 42 25 |
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Infineon Technologies |
IGBT 20 Maximum Ratings Parameter Symbol Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C |
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Infineon Technologies |
IGBT |
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Infineon Technologies |
Fast IGBT in NPT-technology esoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C 2 C G E PG-TO-247-3-1 (TO-247AC) VCE 1200V IC 8A Eoff 0.7mJ Tj 150°C Marking K07N120 Package PG-TO-247-3-21 Symbol VCE IC Value 1200 16.5 7.9 Unit V A ICpul |
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Infineon Technologies |
Reverse conducting IGBT •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparall |
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Infineon Technologies |
IGBT " 012 # TZ[V H @ @ 3+ + / , , ? , + \ \ ? , + / D D @ @ \ * * 8 25 2!0" 012 # @ 4!06 <0 > 6 012 # ? @ 4!06 <0 > 6 012 # - 2 3!22 2C 8C016 012 # 012 # %011 %20 %5 1 # %5 "2 "2 ? @ T SV H , @ H @ + \ 3+ D I+ D "+ B ] 0# 2 - 2 3!22 "8%0"65%2 |
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Infineon Technologies |
IGBT C TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •comp |
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Infineon Technologies |
IGBT andBenefits: C LowVCE(sat)L5technologyoffering •Verylowcollector-emittersaturationvoltageVCEsat •Best-in-Classtradeoffbetweenconductionandswitchinglosses •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature |
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Infineon Technologies |
IGBT andBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowQg •IGBTcopackedwithRAPID1fastan |
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Infineon Technologies |
IGBT 120 Maximum Ratings Parameter Symbol Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C |
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Infineon Technologies |
IGBT Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very |
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Infineon Technologies |
IGBT Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - Frequency Converters - Uninterruptible Power Supply TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - ve |
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Infineon Technologies |
IGBT •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparall |
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Desde 2024. D4U Semiconductor.
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