K07N120 |
Part Number | K07N120 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Description | SKW07N120 www.DataSheet4U.com Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Desi... |
Features |
esoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C
2
C
G
E
PG-TO-247-3-1 (TO-247AC)
VCE 1200V
IC 8A
Eoff 0.7mJ
Tj 150°C
Marking K07N120
Package PG-TO-247-3-21
Symbol VCE IC
Value 1200 16.5 7.9
Unit V A
ICpul s IF
27 27
13 7 IFpul s VGE tSC Ptot 27 ±20 10 125 V µs W
VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C
1 2
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2_1 Apr 06
Power Semiconductors
SKW07N120
www.DataSheet4U.com
Thermal Resistance Parameter Characteristic IGBT thermal resistance, ju... |
Document |
K07N120 Data Sheet
PDF 877.14KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | K0769NC600 |
IXYS |
Medium Voltage Thyristor | |
2 | K0769NC610 |
IXYS |
Medium Voltage Thyristor | |
3 | K0769NC620 |
IXYS |
Medium Voltage Thyristor | |
4 | K0769NC630 |
IXYS |
Medium Voltage Thyristor | |
5 | K0769NC640 |
IXYS |
Medium Voltage Thyristor | |
6 | K0769NC650 |
IXYS |
Medium Voltage Thyristor |