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K25N120 |
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| Part Number | K25N120 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | www.DataSheet.co.kr SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • De... |
| Features |
wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C
2
C
E
PG-TO-247-3
VCE 1200V
IC 25A
Eoff 2.9mJ
Tj 150°C
Marking K25N120
Package PG-TO-247-3
Symbol VCE IC
Value 1200 46 25
Unit V A
ICpuls IF
84 84
42 25 IFpuls VGE tSC Ptot 80 ±20 10 313 V µs W
VGE = 15V, 100V≤VCC ≤1200V, Tj ≤ 150°C
1 2
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2_2 Sep 08
Datasheet pdf - http://www.DataSheet4U.net/
Power Semiconductors
www.DataSheet.co.kr
SKW25N120
Thermal Resistance Parameter Characteristic IGBT ... |
| Document |
 K25N120 Data Sheet
PDF 474.76KB |
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