Infineon Technologies HYB Hoja de datos

No.	parte #	Fabricante	Descripción
1	HYB39S256800DC	Infineon Technologies	(HYB39S256xxxD) 256 MBit Synchronous DRAM Programmable Burst Length: 1, 2, 4, 8 and full page Multiple Burst Read with Single Write Operation Automatic Command and Controlled Precharge www.DataSheet4U.com The HYB39S256400/800/160DT(L) are four bank Synchronous DRAM’s organized as 4 banks x
2	HYB39S256160DTL	Infineon Technologies	(HYB39S256xxxD) 256 MBit Synchronous DRAM Programmable Burst Length: 1, 2, 4, 8 and full page Multiple Burst Read with Single Write Operation Automatic Command and Controlled Precharge www.DataSheet4U.com The HYB39S256400/800/160DT(L) are four bank Synchronous DRAM’s organized as 4 banks x
3	HYB39S256400CT	Infineon Technologies	(HYB39S256xxxCT) 256 MBit Synchronous DRAM ial wrap around www.DataSheet4U.com The HYB39S256400/800/160CT(L) are four bank Synchronous DRAM’s organized as 4 banks x 16MBit x4, 4 banks x 8MBit x8 and 4 banks x 4Mbit x16 respectively. These synchronous devices achieve high speed data transfer
4	HYB25D256400BT	Infineon Technologies AG	256-Mbit Double Data Rate SDRAM CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency (MHz) DDR200 DDR266A DDR266 DDR333 -8 -7 -7F -6 100 133 133 133 125 143 143 166 • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (
5	HYB18T1G160AF	Infineon Technologies AG	1 Gbit DDR2 SDRAM • High Performance: -5 -400 -3.7 -533 -3S -667 -3 1Gb DDR2 SDRAM Speed Sorts DDR2 DDR2 DDR2 DDR2 -667 Units tck MHz Mb/s/pin Bin (CL-tRCD-TRP) max. Clock Frequency 3-3-3 4-4-4 5-5-5 4-4-4 200 400 3 15 15 40 55 266 533 4 15 15 45 60 5 15 15 45 60
6	HYB18T256800AC	Infineon Technologies AG	DDR2 Registered DIMM Modules serial presence detect based on a serial E2PROM device using the 2-pin I2C protocol. The first 128 bytes are programmed with configuration data and the second 128 bytes are available to the customer. INFINEON Technologies [email protected]
7	HYB25DC128160C	Infineon Technologies Corporation	(HYB25DC128160C / HYB25DC128800C) 128M-Bit DDR SDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8	HYB18T1G400AF	Infineon Technologies AG	1 Gbit DDR2 SDRAM • High Performance: -5 -400 -3.7 -533 -3S -667 -3 1Gb DDR2 SDRAM Speed Sorts DDR2 DDR2 DDR2 DDR2 -667 Units tck MHz Mb/s/pin Bin (CL-tRCD-TRP) max. Clock Frequency 3-3-3 4-4-4 5-5-5 4-4-4 200 400 3 15 15 40 55 266 533 4 15 15 45 60 5 15 15 45 60
9	HYB18T256160A	Infineon Technologies AG	256 Mbi t DDR2 SDRAM • High Performance: -5 -400 -3.7 -533 -3S -667 -3 256Mb DDR2 SDRAM Speed Sorts DDR2 DDR2 DDR2 DDR2 -667 Units tck MHz Mb/s/pin Bin (CL-tRCD-TRP) max. Clock Frequency Data Rate CAS Latency (CL) tRCD tRP tRAS tRC 3-3-3 200 400 3 15 15 40 55 4-4-4
10	HYB18T512160A	Infineon Technologies AG	512-Mbit Double-Data-Rate-Two SDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11	HYB18T512400AC-5	Infineon Technologies AG	512-Mbit Double-Data-Rate-Two SDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12	HYB18T512400AC5	Infineon Technologies AG	512-Mbit Double-Data-Rate-Two SDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13	HYB18T512400AF-5	Infineon Technologies AG	512-Mbit Double-Data-Rate-Two SDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14	HYB25L256160AC	Infineon Technologies AG	256-Mbit Mobile-RAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15	HYB25DC128800C	Infineon Technologies Corporation	(HYB25DC128160C / HYB25DC128800C) 128M-Bit DDR SDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16	HYB39S256160DC	Infineon Technologies	(HYB39S256xxxD) 256 MBit Synchronous DRAM Programmable Burst Length: 1, 2, 4, 8 and full page Multiple Burst Read with Single Write Operation Automatic Command and Controlled Precharge www.DataSheet4U.com The HYB39S256400/800/160DT(L) are four bank Synchronous DRAM’s organized as 4 banks x
17	HYB39S256800DTL	Infineon Technologies	(HYB39S256xxxD) 256 MBit Synchronous DRAM Programmable Burst Length: 1, 2, 4, 8 and full page Multiple Burst Read with Single Write Operation Automatic Command and Controlled Precharge www.DataSheet4U.com The HYB39S256400/800/160DT(L) are four bank Synchronous DRAM’s organized as 4 banks x
18	HYB39S128800CT	Infineon Technologies	128-MBit Synchronous DRAM 7.5 for PC 133 3-3-3 applications -8 for PC100 2-2-2 applications The HYB 39S128400/800/160CT are four bank Synchronous DRAM’s organized as 4 banks × 8MBit x4, 4 banks × 4MBit x8 and 4 banks × 2Mbit x16 respectively. These synchronous devices achiev
19	HYB39S128800CTL	Infineon Technologies	128-MBit Synchronous DRAM 7.5 for PC 133 3-3-3 applications -8 for PC100 2-2-2 applications The HYB 39S128400/800/160CT are four bank Synchronous DRAM’s organized as 4 banks × 8MBit x4, 4 banks × 4MBit x8 and 4 banks × 2Mbit x16 respectively. These synchronous devices achiev
20	HYB18T256324F-16	Infineon Technologies AG	256-Mbit GDDR3 DRAM [600MHz] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .