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HYB39S256800DTL |
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| Part Number | HYB39S256800DTL |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | HYB 39S256400DT-6 HYB 39S256400DT-7 HYB 39S256400DT-7.5 HYB 39S256400DT-8 HYB 39S256800DT-6 HYB 39S256800DT-7 HYB 39S256800DT-7.5 HYB 39S256800DT-8 HYB 39S256160DT-6 HYB 39S256160DT-7 HYB 39S256160DT... |
| Features |
Programmable Burst Length: 1, 2, 4, 8 and full page Multiple Burst Read with Single Write Operation Automatic Command and Controlled Precharge
www.DataSheet4U.com
The HYB39S256400/800/160DT(L) are four bank Synchronous DRAM’s organized as 4 banks x 16MBit x4, 4 banks x 8MBit x8 and 4 banks x 4Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates for CAS-latencies by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. The chip is fabricated with INFINEON’s advanced 0.14 µm 256MBit DRAM process t... |
| Document |
 HYB39S256800DTL Data Sheet
PDF 595.38KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HYB39S256800DT |
Infineon Technologies |
(HYB39S256xxxD) 256 MBit Synchronous DRAM |
|
| 2 | HYB39S256800DC |
Infineon Technologies |
(HYB39S256xxxD) 256 MBit Synchronous DRAM |
|
| 3 | HYB39S256800DCL |
Infineon Technologies |
(HYB39S256xxxD) 256 MBit Synchronous DRAM |
|
| 4 | HYB39S256800 |
Siemens Semiconductor |
(HYB39S256xxx) 256 MBit Synchronous DRAM |
|
| 5 | HYB39S256800CT |
Infineon Technologies |
(HYB39S256xxxCT) 256 MBit Synchronous DRAM |
|
| 6 | HYB39S256800CTL |
Infineon Technologies |
(HYB39S256xxxCT) 256 MBit Synchronous DRAM |
|
Desde 2024. D4U Semiconductor.
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