HYB25D256400BT |
Part Number | HYB25D256400BT |
Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
Description | The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. The 256Mb DDR SDRAM uses a double-data-rate archite... |
Features |
CAS Latency and Frequency
CAS Latency 2 2.5 Maximum Operating Frequency (MHz) DDR200 DDR266A DDR266 DDR333 -8 -7 -7F -6 100 133 133 133 125 143 143 166
• Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for reads and is center-aligned with data for writes • Differential clock inputs (CK and CK) • Four internal banks for concurrent operation • Data mask (DM) for write data • DLL aligns DQ and DQS transitions with CK transitions ... |
Document |
HYB25D256400BT Data Sheet
PDF 2.15MB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | HYB25D256400B |
Infineon Technologies AG |
256 Mbit Double Data Rate SDRAM | |
2 | HYB25D256400BC |
Infineon |
256-Mbit Double Data Rate SDRAM | |
3 | HYB25D256400CC |
Infineon |
256 Mbit Double Data Rate SDRAM | |
4 | HYB25D256400CE |
Infineon |
256 Mbit Double Data Rate SDRAM | |
5 | HYB25D256400CF |
Infineon |
256 Mbit Double Data Rate SDRAM | |
6 | HYB25D256400CT |
Infineon |
256 Mbit Double Data Rate SDRAM |