| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Infineon Technologies AG |
Smart Power High-Side-Switch • Overload protection • Current limitation • Short circuit protection • Thermal shutdown with restart • Fast demagnetization of inductive loads • Reverse battery protection with external resistor • CMOS compatible input • Loss of GND and loss of Vbb |
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Infineon Technologies AG |
High-side switch Short-circuit protection Overtemperature protection verse load current only limited by connected load. BSP 350 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection Semiconductor Group Page 1 of 6 08.04.97 BSP 350 Electrical Characteristics Parameter and Conditions at Tj = |
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Infineon Technologies AG |
SIPMOS Small-Signal Transistor K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- sour |
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Infineon Technologies AG |
NPN Silicon Darlington Transistors n. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BSP50 IC = 10 mA, IB = 0 , BSP51 IC = 10 mA, IB = 0 , BSP52 V(BR)CEO 45 60 80 - - Collector-base breakdown voltage IC = 100 µA, IE = 0 , BSP50 IC = 100 µA |
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Infineon Technologies AG |
PNP Silicon Darlington Transistors Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V(BR)CEO typ. max. Unit V 45 60 80 - BSP60 BSP61 BSP62 V(BR)CBO Collector-base breakdown voltage IC = 100 µA, IE = 0 BSP60 BSP61 BSP62 60 80 90 V(BR)EBO ICES IEBO hFE - 10 10 µA Emitter |
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Infineon Technologies AG |
Smart Power High-Side-Switch • Overload protection • Current limitation • Short circuit protection • Thermal shutdown with restart • Fast demagnetization of inductive loads • Reverse battery protection with external resistor • Open drain diagnostic output • Open load detection i |
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Infineon Technologies AG |
SIPMOS Power-Transistor • N-Channel • Enhancement mode • Logic Level • dv/dt rated Product Summary VDS RDS(on) ID 600 45 0.12 SOT-223 V Ω A Type BSP125 Package SOT-223 Ordering Code Q62702-S654 Tape and Reel Information E6327: 3000 pcs/reel Marking BSP125 Maximum Ra |
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Infineon Technologies AG |
SIPMOS Small-Signal-Transistor • N-channel • Depletion mode • dv /dt rated Product Summary V DS R DS(on),max I DSS,min 200 3.5 0.14 V Ω A SOT-223 Type BSP149 Package SOT-223 Ordering Code Q67000-S071 Tape and Reel Information E6327: 1000 pcs/reel Marking BSP149 Maximum rat |
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Infineon Technologies AG |
SIPMOS Small-Signal-Transistor • P-Channel • Enhancement mode • Avalanche rated • dv/dt rated Product Summary VDS R DS(on) ID -60 0.3 -1.9 SOT-223 4 V Ω A 3 2 1 VPS05163 Drain pin 2 Type BSP 170 P Package SOT-223 Ordering Code Q67041-S4018 Gate pin1 Source pin 3 Maximum R |
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Infineon Technologies AG |
SIPMOS Small-Signal-Transistor Product Summary • P-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 4 Pin 1 Pin2/4 PIN 3 • Qualified according to AEC Q101 G |
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Infineon Technologies AG |
SIPMOS Small-Signal Transistor -55 ... + 150 -55 ... + 150 ˚C ≤ 70 ≤ 10 E 55 / 150 / 56 K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min |
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Infineon Technologies AG |
SIPMOS Small-Signal-Transistor • N channel • BSP 320S VDS RDS(on) ID 4 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current 60 0.12 2.9 V Ω A Enhancement mode • Avalanche rated • dv/dt rated 3 2 1 VPS05163 Type BSP320S Package SOT-2 |
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Infineon Technologies AG |
High-side switch Short-circuit protection Overtemperature protection ifier ESD Logic Limit for unclamped ind. loads OUT Temperature sensor 3 Load R in MINI-PROFET Load GND 1 I IN 1) 2) For 12 V applications only. Reverse load current only limited by connected load. BSP 365 on epoxy pcb 40 mm x 40 mm x 1.5 mm |
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Infineon Technologies AG |
SIPMOS Small-Signal Transistor 55 / 150 / 56 K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Uni |
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Infineon Technologies AG |
Smart High-Side Power Switch Voltage sensor Overvoltage protection Current Gate limit protection + Vbb 4 Charge pump Level shifter Rectifier Limit for unclamped ind. loads OUT Temperature 1 sensor ESD Logic Load GND 2 Signal GND miniPROFET Load GND 1) With resi |
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Infineon Technologies AG |
NPN Silicon Darlington Transistors n. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BSP50 IC = 10 mA, IB = 0 , BSP51 IC = 10 mA, IB = 0 , BSP52 V(BR)CEO 45 60 80 - - Collector-base breakdown voltage IC = 100 µA, IE = 0 , BSP50 IC = 100 µA |
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Infineon Technologies AG |
MiniPROFET(High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis) ±1 7 70 Unit V A V mA J °C W kV K/W Tj Tstg Ptot VESD RthJS RthJA + V bb 4 Voltage source ESDDiode Overvoltage protection Current limit Gate protection V Logic Voltage sensor Charge pump Level shifter Rectifier Limit for unclamped ind. loads |
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Infineon Technologies AG |
PNP Silicon Darlington Transistors Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V(BR)CEO typ. max. Unit V 45 60 80 - BSP60 BSP61 BSP62 V(BR)CBO Collector-base breakdown voltage IC = 100 µA, IE = 0 BSP60 BSP61 BSP62 60 80 90 V(BR)EBO ICES IEBO hFE - 10 10 µA Emitter |
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Infineon Technologies AG |
OptiMOS Power-Transistor • N-Channel Product Summary VDS R DS(on) ID 55 90 2.8 SOT 223 V mΩ A • Enhancement mode • Logic Level Type BSP615S2L Package SOT 223 Ordering Code Q67060-S7211 Marking 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Paramete |
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Infineon Technologies AG |
Smart Power High-Side-Switch • Overload protection • Current limitation • Short circuit protection • Thermal shutdown with restart • Fast demagnetization of inductive loads • Reverse battery protection with external resistor • Open drain diagnostic output • CMOS compatible input |
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Desde 2024. D4U Semiconductor.
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