Distributor | Stock | Price | Buy |
---|
BSP350 |
Part Number | BSP350 |
Manufacturer | Siemens Semiconductor Group |
Title | High-side switch Short-circuit protection Overtemperature protection |
Description | Mini PROFET® BSP 350 • High-side switch • Short-circuit protection • Overtemperature protection with hysteresis • Overload protection • Overvoltage protection • Reverse battery protection1) • Switching inductive load • Clamp of negative output voltage with inductive loads • Maximum current internall. |
Features | rse load current only limited by connected load. BSP 350 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection Semiconductor Group 1 04.97 BSP 350 Electrical Characteristics Parameter and Conditions at Tj = 25 °C, Vbb = 13.5V unless otherwise specified Symbol min Values typ Unit max Load Switching Capabilities and Characteristics On-state resistance (pin 2 to 3) IL . |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BSP3505D |
Micronas Semiconductor |
Baseband Siund Processor | |
2 | BSP30 |
STMicroelectronics |
MEDIUM POWER AMPLIFIER | |
3 | BSP30 |
Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors | |
4 | BSP300 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) | |
5 | BSP300 |
Infineon Technologies AG |
SIPMOS Small-Signal Transistor | |
6 | BSP304 |
NXP |
P-channel enhancement mode vertical D-MOS transistors | |
7 | BSP304A |
NXP |
P-channel enhancement mode vertical D-MOS transistors | |
8 | BSP308 |
Infineon Technologies |
Sipmos(r) Small-signal-transistor | |
9 | BSP31 |
NXP |
PNP medium power transistors | |
10 | BSP31 |
STMicroelectronics |
MEDIUM POWER AMPLIFIER |