Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
BSP30 |
| Part Number | BSP30 |
| Manufacturer | Diotec Semiconductor |
| Title | Surface mount Si-Epitaxial PlanarTransistors |
| Description | BSP 30 ... BSP 33 PNP Switching Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 1.65 4 ±0.2 ±0.3 6.5 ±0.1 3 ±0.2 1.3 W SOT-223 0.04 g Plastic case Kunststoffgehäuse 3.5 Weight approx. –. |
| Features |
ector current – Koll.-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temp. – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Characteristics (Tj = 25/C) Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 60 V IE = 0, - VCB = 60 V, Tj = 150/C Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 5 V - IC = 150 mA, - IB = 15 mA - IC = 500 mA, . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSP300 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) |
|
| 2 | BSP300 |
Infineon Technologies AG |
SIPMOS Small-Signal Transistor |
|
| 3 | BSP304 |
NXP |
P-channel enhancement mode vertical D-MOS transistors |
|
| 4 | BSP304A |
NXP |
P-channel enhancement mode vertical D-MOS transistors |
|
| 5 | BSP308 |
Infineon Technologies |
Sipmos(r) Small-signal-transistor |
|
| 6 | BSP31 |
NXP |
PNP medium power transistors |
|
| 7 | BSP31 |
STMicroelectronics |
MEDIUM POWER AMPLIFIER |
|
| 8 | BSP315 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) |
|
| 9 | BSP315P |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor |
|
| 10 | BSP316 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) |
|
Desde 2024. D4U Semiconductor.
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