Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
BSP31 |
| Part Number | BSP31 |
| Manufacturer | STMicroelectronics |
| Title | MEDIUM POWER AMPLIFIER |
| Description | BSP30/31 BSP32/33 MEDIUM POWER AMPLIFIER ADVANCE DATA s s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE NPN CO. |
| Features |
Collecor Tab Max Max 62.5 8
o o
C/W C/W
• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (IE = 0) Test Conditions V CB = -60 V V CB = -60 V T j = 150 C -70 -90 -60 -80 -70 -90 -5 o Min. Typ. Max. -100 -50 Unit nA . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSP30 |
STMicroelectronics |
MEDIUM POWER AMPLIFIER |
|
| 2 | BSP30 |
Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors |
|
| 3 | BSP300 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) |
|
| 4 | BSP300 |
Infineon Technologies AG |
SIPMOS Small-Signal Transistor |
|
| 5 | BSP304 |
NXP |
P-channel enhancement mode vertical D-MOS transistors |
|
| 6 | BSP304A |
NXP |
P-channel enhancement mode vertical D-MOS transistors |
|
| 7 | BSP308 |
Infineon Technologies |
Sipmos(r) Small-signal-transistor |
|
| 8 | BSP315 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) |
|
| 9 | BSP315P |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor |
|
| 10 | BSP316 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) |
|
Desde 2024. D4U Semiconductor.
|