Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
BSP170P |
| Part Number | BSP170P |
| Manufacturer | Siemens Semiconductor Group |
| Title | SIPMOS Power Transistor |
| Description | BSP 170 P Preliminary data SIPMOS® Power Transistor • P-Channel • Enhancement mode • Avalanche rated • dv/dt rated Pin 1 G Type BSP 170 P VDS 60 V ID RDS(on) Package @ VGS VGS = -10 V SOT-223 Maximum Ratings , at Tj = 25°C, unless otherwise specified Parameter Continuous drain current TA = 25 °C T. |
| Features | Characteristics Parameter at Tj = 25 °C, unless otherwise specified Thermal Characteristics Thermal resistance, junction -soldering point (Pin 4 ) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area1) RthJS RthJA tbd 70 Symbol min. Values typ. max. tbd K/W Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -0.25 mA Gate threshold voltage, VGS = VDS ID = -460. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSP170 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor |
|
| 2 | BSP17 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor |
|
| 3 | BSP171 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor |
|
| 4 | BSP171P |
Siemens Semiconductor Group |
SIPMOS Power Transistor |
|
| 5 | BSP171P |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor |
|
| 6 | BSP179 |
Infineon |
Small-Signal-Transistor |
|
| 7 | BSP100 |
NXP |
N-channel enhancement mode TrenchMOS transistor |
|
| 8 | BSP100 |
NXP |
N-channel enhancement mode TrenchMOS transistor |
|
| 9 | BSP106 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 10 | BSP107 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
Desde 2024. D4U Semiconductor.
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