BSP170P |
Part Number | BSP170P |
Manufacturer | Siemens Semiconductor Group |
Description | BSP 170 P Preliminary data SIPMOS® Power Transistor • P-Channel • Enhancement mode • Avalanche rated • dv/dt rated Pin 1 G Type BSP 170 P VDS 60 V ID RDS(on) Package @ VGS VGS = -10 V SOT-223 Maximu... |
Features |
Characteristics Parameter at Tj = 25 °C, unless otherwise specified Thermal Characteristics Thermal resistance, junction -soldering point (Pin 4 ) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area1) RthJS RthJA tbd 70 Symbol min. Values typ. max. tbd K/W Unit
Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -0.25 mA Gate threshold voltage, VGS = VDS ID = -460 µA Zero gate voltage drain current VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current VGS = -20 V, VDS = 0 V Drain-Source on-state resistance VGS = -10... |
Document |
BSP170P Data Sheet
PDF 152.82KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BSP170 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor | |
2 | BSP170P |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor | |
3 | BSP17 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor | |
4 | BSP171 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor | |
5 | BSP171P |
Siemens Semiconductor Group |
SIPMOS Power Transistor | |
6 | BSP171P |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor |